| PART |
Description |
Maker |
| CR150DM-6 CR150DM-8 CR150DM CR150DM-10 CR150DM-12 |
Phase Control SCR 175 Amperes Avg 200-1800 Volts 相位控制晶闸75安培平均200-1800伏特
|
KEMET Corporation
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| I20 180RKI20M |
Silicon Controlled Rectifier, 172 A, 200 V, SCR, TO-209AC
285 A, 200 V, SCR, TO-209AB
|
Vishay Semiconductors
|
| S4014BH TXN258 X0202DA X0402DE X0403ME S0402NH |
40 A, 200 V, SCR, TO-220AB TO-220AB, 3 PIN
8 A, 200 V, SCR, TO-220AB
1.25 A, 400 V, SCR, TO-92
4 A, 400 V, SCR, TO202-1
4 A, 600 V, SCR, TO202-1
4 A, 800 V, SCR, TO-220AB
|
STMICROELECTRONICS
|
| CS3P-40B CS3P-40D CS3P-40M CS3P-40N CS3P-40P CS3P- |
40 A, 1000 V, SCR TO-3P, 3 PIN
40 A, 1200 V, SCR TO-3P, 3 PIN
ISOLATED 40 AMP SCR 200 THRU 1200 VOLTS
Leaded Thyristor SCR
|
Central Semiconductor, Corp.
Central Semiconductor Corp
|
| P036RH06FNO P042RH04CM P027PH04CJO P042RH04CMO P02 |
100 A, 600 V, SCR
100 A, 400 V, SCR, TO-65
670 A, 600 V, SCR, TO-200AB
755 A, 600 V, SCR, TO-200AB
670 A, 200 V, SCR, TO-200AB
355 A, 600 V, SCR
355 A, 1000 V, SCR
355 A, 400 V, SCR
5680 A, 2600 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| CS218I-30PBLEADFREE CS218I-30BLEADFREE CS218I-30DL |
30 A, 1200 V, SCR, TO-218
30 A, 200 V, SCR, TO-218
30 A, 400 V, SCR, TO-218
30 A, 600 V, SCR, TO-218
30 A, 1000 V, SCR, TO-218
35 A, 1200 V, SCR, TO-218
35 A, 1200 V, SCR, TO-48
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| CR02AM-4 CR02AM CR02AM-6 CR02AM-8 |
0.47 A, 200 V, SCR, TO-92
0.47 A, 300 V, SCR, TO-92
LOW POWER USE PLANAR PASSIVATION TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CS218-35D CS218-35PB CS218-35B CS218-35N CS218-35M |
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 400 V, SCR, TO-218
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 200 V, SCR, TO-218
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 600 V, SCR, TO-218
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 800 V, SCR, TO-218
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 1000 V, SCR, TO-218
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 1200 V, SCR, TO-218
|
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| N0676YS120-180 N0782YS120-160 N0992YS020-060 N0734 |
1346 A, 1800 V, SCR
1554 A, 1600 V, SCR
1995 A, 600 V, SCR
1465 A, 1600 V, SCR
1201 A, 2400 V, SCR
|
Westcode Semiconductors, Ltd.
|
| TD210N14/20KOF-A TD170N14/20KOF-A DT210N25/16KOF-K |
410 A, 1400 V, SCR
350 A, 1400 V, SCR
410 A, 1600 V, SCR
200 A, 1600 V, SCR
|
|
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